description: the central semiconductor CXT3150 type is a npn silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. marking code: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 50 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 7.0 v collector current i c 5.0 a base current i b 1.0 a power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =50v 1.0 a i ebo v eb =7.0v 1.0 a bv ceo i c =10ma 25 v v ce(sat) i c =3.0a, i b =150ma 0.35 v v ce(sat) i c =4.0a, i b =200ma 0.50 v v be(sat) i c =3.0a, i b =150ma 1.10 v v be(sat) i c =4.0a, i b =200ma 1.40 v h fe v ce =2.0v, i c =500ma 250 550 h fe v ce =2.0v, i c =2.0a 150 h fe v ce =2.0v, i c =5.0a 50 f t v ce =6.0v, i c =50ma, f=200mhz 150 mhz c ob v cb =10v, i e =0, f=1.0mhz 50 pf CXT3150 surface mount npn silicon power transistor sot-89 case central semiconductor corp. tm r4 (20-may 2004) p o w e r 89 tm
lead code: 1) emitter 2) collector 3) base marking code: full part number central semiconductor corp. tm sot-89 case - mechanical outline CXT3150 surface mount npn silicon power transistor r4 (20-may 2004) min max min max a 0.055 0.067 1.40 1.70 b c 0.014 0.018 0.35 0.46 d 0.173 0.185 4.40 4.70 e 0.064 0.074 1.62 1.87 f 0.146 0.177 3.70 4.50 g 0.090 0.106 2.29 2.70 h 0.028 0.051 0.70 1.30 j 0.014 0.019 0.36 0.48 k 0.017 0.023 0.44 0.58 l m sot-89 (rev: r4) dimensions symbol inches millimeters 4 4 0.059 0.118 1.50 3.00
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